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18-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
CY7C1392CV18, CY7C1992CV18
CY7C1393CV18, CY7C1394CV18
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 001-07162 Rev. *C Revised May 22, 2008
Features
18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
300 MHz clock for high bandwidth
2-word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) at 300 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Synchronous internally self-timed writes
DDR-II operates with 1.5 cycle read latency when the DLL is
enabled
Operates similar to a DDR-I device with 1 cycle read latency in
DLL off mode
1.8V core power supply with HSTL inputs and outputs
Variable drive HSTL output buffers
Expanded HSTL output voltage (1.4V–V
DD
)
Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1392CV18 – 2M x 8
CY7C1992CV18 – 2M x 9
CY7C1393CV18 – 1M x 18
CY7C1394CV18 – 512K x 36
Functional Description
The CY7C1392CV18, CY7C1992CV18, CY7C1393CV18, and
CY7C1394CV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with Double Data Rate Separate IO (DDR-II SIO)
architecture. The DDR-II SIO consists of two separate ports: the
read port and the write port to access the memory array. The
read port has data outputs to support read operations and the
write port has data inputs to support write operations. The DDR-II
SIO has separate data inputs and data outputs to completely
eliminate the need to “turn-around” the data bus required with
common IO devices. Access to each port is accomplished
through a common address bus. Addresses for read and write
are latched on alternate rising edges of the input (K) clock. Write
data is registered on the rising edges of both K and K
. Read data
is driven on the rising edges of C and C if provided, or on the
rising edge of K and K
if C/C are not provided. Each address
location is associated with two 8-bit words in the case of
CY7C1392CV18, two 9-bit words in the case of
CY7C1992CV18, two 18-bit words in the case of
CY7C1393CV18, and two 36-bit words in the case of
CY7C1394CV18 that burst sequentially into or out of the device.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to the
two output echo clocks CQ/CQ
, eliminating the need to capture
data separately from each individual DDR-II SIO SRAM in the
system design. Output data clocks (C/C
) enable maximum
system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by
the K or K
input clocks. All data outputs pass through output
registers controlled by the C or C
(or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Description 300 MHz 278 MHz 250 MHz 200 MHz 167 MHz Unit
Maximum Operating Frequency 300 278 250 200 167 MHz
Maximum Operating Current x8 820 770 700 575 485 mA
x9 825 775 700 575 490
x18 865 800 725 600 500
x36 935 850 770 630 540
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Inhaltsverzeichnis

Seite 1 - Burst Architecture

18-Mbit DDR-II SIO SRAM 2-WordBurst ArchitectureCY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Cypress Semiconductor Corporation • 198 Champion C

Seite 2

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 10 of 30Truth TableThe truth table for CY7C1392CV18, CY7C1992CV

Seite 3

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 11 of 30Write Cycle DescriptionsThe write cycle description tab

Seite 4

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 12 of 30IEEE 1149.1 Serial Boundary Scan (JTAG)These SRAMs inco

Seite 5

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 13 of 30IDCODEThe IDCODE instruction loads a vendor-specific, 3

Seite 6

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 14 of 30TAP Controller State DiagramThe state diagram for the T

Seite 7

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 15 of 30TAP Controller Block DiagramTAP Electrical Characterist

Seite 8

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 16 of 30TAP AC Switching Characteristics Over the Operating Ran

Seite 9

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 17 of 30Identification Register Definitions Instruction FieldVa

Seite 10 - CY7C1393CV18, CY7C1394CV18

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 18 of 30Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # B

Seite 11

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 19 of 30Power Up Sequence in DDR-II SRAMDDR-II SRAMs must be po

Seite 12

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 2 of 30Logic Block Diagram (CY7C1392CV18)Logic Block Diagram (C

Seite 13

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 20 of 30Maximum RatingsExceeding maximum ratings may impair the

Seite 14

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 21 of 30IDD [19]VDD Operating Supply VDD = Max,IOUT = 0 mA,f =

Seite 15

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 22 of 30CapacitanceTested initially and after any design or pro

Seite 16 - [+] Feedback

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 23 of 30Switching Characteristics Over the Operating Range [20,

Seite 17

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 24 of 30Output TimestCOtCHQVC/C Clock Rise (or K/K in single cl

Seite 18

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 25 of 30Switching WaveformsFigure 5. Read/Write/Deselect Seque

Seite 19 - DLL Constraints

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 26 of 30Ordering Information Not all of the speed, package, and

Seite 20 - Operating Range

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 27 of 30250 CY7C1392CV18-250BZC 51-85180 165-Ball Fine Pitch Ba

Seite 21

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 28 of 30167 CY7C1392CV18-167BZC 51-85180 165-Ball Fine Pitch Ba

Seite 22 - Thermal Resistance

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 29 of 30Package DiagramFigure 6. 165-Ball FBGA (13 x 15 x 1.4 m

Seite 23

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 3 of 30Logic Block Diagram (CY7C1393CV18)Logic Block Diagram (C

Seite 24

Document #: 001-07162 Rev. *C Revised May 22, 2008 Page 30 of 30QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypres

Seite 25 - Switching Waveforms

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 4 of 30Pin Configuration The Pin Configuration for CY7C1392CV18

Seite 26

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 5 of 30CY7C1393CV18 (1M x 18)1 2 3 4 5 6 7 8 9 10 11A CQ NC/144

Seite 27

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 6 of 30Pin Definitions Pin Name IO Pin DescriptionD[x:0]Input-S

Seite 28

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 7 of 30CQ Echo Clock CQ is referenced with respect to C. This i

Seite 29

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 8 of 30Functional OverviewThe CY7C1392CV18, CY7C1992CV18, CY7C1

Seite 30

CY7C1392CV18, CY7C1992CV18CY7C1393CV18, CY7C1394CV18Document #: 001-07162 Rev. *C Page 9 of 30synchronized to the output clock of the DDR-II. In the s

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