Cypress CY14B101NA Bedienungsanleitung

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CY14B101LA
CY14B101NA
1-Mbit (128 K × 8/64 K × 16) nvSRAM
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 001-42879 Rev. *K Revised January 18, 2011
1-Mbit (128 K x 8/64 K x 16) nvSRAM
Features
20 ns, 25 ns, and 45 ns access times
Internally organized as 128 K × 8 (CY14B101LA) or 64 K ×
16 (CY14B101NA)
Hands off automatic STORE on power-down with only a small
capacitor
STORE to QuantumTrap nonvolatile elements initiated by
software, device pin, or AutoStore on power-down
RECALL to SRAM initiated by software or power-up
Infinite read, write, and RECALL cycles
1 million STORE cycles to QuantumTrap
20 year data retention
Single 3 V +20% to -10% operation
Industrial temperature
Packages
32-Pin small-outline integrated circuit (SOIC)
44-/54-Pin thin small outline package (TSOP II)
48-Pin shrink small-outline package (SSOP)
48-Ball fine-pitch ball grid array (FBGA)
Pb-free and restriction of hazardous substances (RoHS)
compliant
Functional Description
The Cypress CY14B101LA/CY14B101NA is a fast static RAM
(SRAM), with a nonvolatile element in each memory cell. The
memory is organized as 128 K bytes of 8 bits each or 64 K words
of 16 bits each. The embedded nonvolatile elements incorporate
QuantumTrap technology, producing the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data resides in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power-down. On power-up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
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Logic Block Diagram
[1, 2, 3]
Notes
1. Address A
0
- A
16
for ×8 configuration and Address A
0
- A
15
for ×16 configuration.
2. Data DQ
0
- DQ
7
for ×8 configuration and Data DQ
0
- DQ
15
for ×16 configuration.
3. BHE
and BLE are applicable for ×16 configuration only.
[+] Feedback
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Inhaltsverzeichnis

Seite 1 - CY14B101NA

CY14B101LACY14B101NA1-Mbit (128 K × 8/64 K × 16) nvSRAMCypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600

Seite 2

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 10 of 26AC Test ConditionsInput pulse levels...

Seite 3

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 11 of 26AC Switching Characteristics ParametersDescription20 ns 25 ns 45 nsUnitCypressParamet

Seite 4

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 12 of 26Notes22. BHE and BLE are applicable for x16 configuration only.23. WE must be HIGH du

Seite 5

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 13 of 26Figure 9. SRAM Write Cycle #2: CE Controlled[27, 28, 29, 30]Figure 10. SRAM Write C

Seite 6

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 14 of 26AutoStore/Power-Up RECALLParameter Description20 ns 25 ns 45 nsUnitMin Max Min Max Mi

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CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 15 of 26Software Controlled STORE/RECALL CycleParameter[37, 38]Description20 ns 25 ns 45 nsUn

Seite 8

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 16 of 26Hardware STORE CycleParameter Description20 ns 25 ns 45 nsUnitMin Max Min Max Min Max

Seite 9

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 17 of 26 Notes43. Data DQ0 - DQ7 for x8 configuration and Data DQ0 - DQ15 for x16 configurati

Seite 10

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 18 of 26Ordering InformationSpeed(ns)Ordering CodePackageDiagramPackage TypeOperatingRange20

Seite 11

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 19 of 26Ordering Code DefinitionOption:T - Tape and ReelBlank - Std.Speed:20 - 20 ns25 - 25 n

Seite 12

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 2 of 26Contents1-Mbit (128 K x 8/64 K x 16) nvSRAM ...1Features ..

Seite 13

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 20 of 26Package Diagrams Figure 16. 32-Pin SOIC (51-85127)Figure 17. 44-Pin TSOP II (51-850

Seite 14

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 21 of 26Figure 18. 48-Pin SSOP (51-85061)Package Diagrams (continued)51-85061 *D[+] Feedbac

Seite 15

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 22 of 26Figure 19. 48-Ball FBGA - 6 mm x 10 mm x 1.2 mm (51-85128)Package Diagrams (continu

Seite 16

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 23 of 26AcronymsDocument ConventionsUnits of MeasureFigure 20. 54-Pin TSOP II (51-85160)Pack

Seite 17

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 24 of 26Document History Page Document Title: CY14B101LA, CY14B101NA 1-Mbit (128 K × 8/64 K ×

Seite 18

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 25 of 26*C 2733909 GVCH/AESA 07/09/09 Removed 48-ball FBGA package and added 54-pin TSOP II P

Seite 19

Document #: 001-42879 Rev. *K Revised January 18, 2011 Page 26 of 26All products and company names mentioned in this document may be the trademarks

Seite 20

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 3 of 26Pinouts Figure 1. Pin Diagram - 44-Pin TSOP II Figure 2. Pin Diagram - 48-Pin SSOP a

Seite 21

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 4 of 26Figure 3. 48-Ball FBGA and 54-Pin TSOP IITable 1. Pin DefinitionsPin Name I/O Type D

Seite 22

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 5 of 26Device OperationThe CY14B101LA/CY14B101NA nvSRAM is made up of twofunctional component

Seite 23

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 6 of 26SRAM write operations that are in progress when HSB is drivenLOW by any means are give

Seite 24

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 7 of 26Preventing AutoStoreThe AutoStore function is disabled by initiating an AutoStoredisab

Seite 25

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 8 of 26Best PracticesnvSRAM products have been used effectively for over 27 years.While ease-

Seite 26

CY14B101LACY14B101NADocument #: 001-42879 Rev. *K Page 9 of 26Maximum RatingsExceeding maximum ratings may shorten the useful life of thedevice. The

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