Cypress Perform CY7C1515KV18 Bedienungsanleitung PDF herunterladen

72-Mbit QDR™-II SRAM 4-Word

Burst Architecture

CY7C1511KV18, CY7C1526KV18

CY7C1513KV18, CY7C1515KV18

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600

Document Number: 001-00435 Rev. *E Revised March 30, 2009

Features

■ Separate Independent Read and Write Data Ports

❐ Supports concurrent transactions

■ 333 MHz Clock for High Bandwidth

■ 4-word Burst for Reducing Address Bus Frequency

■ Double Data Rate (DDR) Interfaces on both Read and Write

Ports (data transferred at 666 MHz) at 333 MHz

■ Two Input Clocks (K and K) for precise DDR Timing

❐ SRAM uses rising edges only

■ Two Input Clocks for Output Data (C and C) to minimize Clock

Skew and Flight Time mismatches

■ Echo Clocks (CQ and CQ) simplify Data Capture in High Speed

Systems

■ Single Multiplexed Address Input Bus latches Address Inputs

for Read and Write Ports

■ Separate Port Selects for Depth Expansion

■ Synchronous Internally Self-timed Writes

■ QDR™-II operates with 1.5 Cycle Read Latency when DOFF

is asserted HIGH

■ Operates similar to QDR-I Device with 1 Cycle Read Latency

when DOFF

is asserted LOW

■ Available in x8, x9, x18, and x36 Configurations

■ Full Data Coherency, providing Most Current Data

■ Core V

= 1.8V (±0.1V); IO V

DDQ

= 1.4V to V

❐ Supports both 1.5V and 1.8V IO supply

■ Available in 165-ball FBGA Package (13 x 15 x 1.4 mm)

■ Offered in both Pb-free and non Pb-free Packages

■ Variable Drive HSTL Output Buffers

■ JTAG 1149.1 Compatible Test Access Port

■ Phase Locked Loop (PLL) for Accurate Data Placement

Configurations

CY7C1511KV18 – 8M x 8

CY7C1526KV18 – 8M x 9

CY7C1513KV18 – 4M x 18

CY7C1515KV18 – 2M x 36

Functional Description

The CY7C1511KV18, CY7C1526KV18, CY7C1513KV18, and

CY7C1515KV18 are 1.8V Synchronous Pipelined SRAMs,

equipped with QDR-II architecture. QDR-II architecture consists

of two separate ports: the read port and the write port to access

the memory array. The read port has dedicated data outputs to

support read operations and the write port has dedicated data

inputs to support write operations. QDR-II architecture has

separate data inputs and data outputs to completely eliminate

the need to “turnaround” the data bus that exists with common

IO devices. Each port can be accessed through a common

address bus. Addresses for read and write addresses are

latched on alternate rising edges of the input (K) clock. Accesses

to the QDR-II read and write ports are independent of one

another. To maximize data throughput, both read and write ports

are equipped with DDR interfaces. Each address location is

associated with four 8-bit words (CY7C1511KV18), 9-bit words

(CY7C1526KV18), 18-bit words (CY7C1513KV18), or 36-bit

words (CY7C1515KV18) that burst sequentially into or out of the

device. Because data can be transferred into and out of the

device on every rising edge of both input clocks (K and K

and C

), memory bandwidth is maximized while simplifying

system design by eliminating bus “turnarounds”.

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K

input clocks. All data outputs pass through output

registers controlled by the C or C

(or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

Table 1. Selection Guide

Description 333 MHz 300 MHz 250 MHz 200 MHz 167 MHz Unit

Maximum Operating Frequency 333 300 250 200 167 MHz

Maximum Operating Current x8 600 560 490 430 380 mA

x9 600 560 490 430 380

x18 620 570 500 440 390

x36 850 790 680 580 510

[+] Feedback

1 2 3 4 5 6 ... 30 31

Inhaltsverzeichnis

Seite 1 - Burst Architecture

72-Mbit QDR™-II SRAM 4-WordBurst ArchitectureCY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Cypress Semiconductor Corporation • 198 Champion Cour

Seite 2

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 10 of 31Application ExampleFigure 1 shows four QDR-II used

Seite 3

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 11 of 31Write Cycle Descriptions The write cycle descripti

Seite 4

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 12 of 31Write Cycle DescriptionsThe write cycle descriptio

Seite 5

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 13 of 31IEEE 1149.1 Serial Boundary Scan (JTAG)These SRAMs

Seite 6

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 14 of 31IDCODEThe IDCODE instruction loads a vendor-specif

Seite 7

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 15 of 31TAP Controller State DiagramThe state diagram for

Seite 8

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 16 of 31TAP Controller Block DiagramTAP Electrical Charact

Seite 9

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 17 of 31TAP AC Switching Characteristics Over the Operatin

Seite 10 - CY7C1513KV18, CY7C1515KV18

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 18 of 31Identification Register Definitions Instruction Fi

Seite 11

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 19 of 31Boundary Scan Order Bit # Bump ID Bit # Bump ID Bi

Seite 12

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 2 of 31Logic Block Diagram (CY7C1511KV18)Logic Block Diagr

Seite 13

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 20 of 31Power Up Sequence in QDR-II SRAMQDR-II SRAMs must

Seite 14

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 21 of 31Maximum RatingsExceeding maximum ratings may impai

Seite 15

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 22 of 31IDD [21]VDD Operating Supply VDD = Max,IOUT = 0 mA

Seite 16

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 23 of 31CapacitanceTested initially and after any design o

Seite 17 - [+] Feedback

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 24 of 31Switching Characteristics Over the Operating Range

Seite 18

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 25 of 31Output TimestCOtCHQVC/C Clock Rise (or K/K in sing

Seite 19

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 26 of 31Switching WaveformsFigure 5. Read/Write/Deselect

Seite 20 - PLL Constraints

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 27 of 31Ordering Information The following table lists all

Seite 21

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 28 of 31250 CY7C1511KV18-250BZC 51-85180 165-Ball Fine Pit

Seite 22

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 29 of 31167 CY7C1511KV18-167BZC 51-85180 165-Ball Fine Pit

Seite 23 - Thermal Resistance

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 3 of 31Logic Block Diagram (CY7C1513KV18)Logic Block Diagr

Seite 24

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 30 of 31Package DiagramFigure 6. 165-Ball FBGA (13 x 15 x

Seite 25

Document Number: 001-00435 Rev. *E Revised March 30, 2009 Page 31 of 31QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by

Seite 26 - Switching Waveforms

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 4 of 31Pin Configuration The pin configurations for CY7C15

Seite 27

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 5 of 31CY7C1513KV18 (4M x 18)1 2 3 4 5 6 7 8 9 10 11A CQ N

Seite 28

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 6 of 31Pin Definitions Pin Name I/O Pin DescriptionD[x:0]I

Seite 29

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 7 of 31CQ Echo Clock CQ Referenced with Respect to C. This

Seite 30 - Package Diagram

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 8 of 31Functional OverviewThe CY7C1511KV18, CY7C1526KV18,

Seite 31

CY7C1511KV18, CY7C1526KV18CY7C1513KV18, CY7C1515KV18Document Number: 001-00435 Rev. *E Page 9 of 31Single Clock ModeThe CY7C1511KV18 is used with a si

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