Cypress MoBL CY62126EV30 Bedienungsanleitung PDF herunterladen

MoBL

,CY62126EV30

1-Mbit (64K x 16) Static RAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600

Document #: 38-05486 Rev. *E Revised January 5, 2009

Features

■ High speed: 45 ns

■ Temperature ranges

❐ Industrial: –40°C to +85°C

❐ Automotive: –40°C to +125°C

■ Wide voltage range: 2.2V to 3.6V

■ Pin compatible with CY62126DV30

■ Ultra low standby power

❐ Typical standby current: 1 μA

❐ Maximum standby current: 4 μA

■ Ultra low active power

❐ Typical active current: 1.3 mA at f = 1 MHz

■ Easy memory expansion with CE and OE features

■ Automatic power down when deselected

■ CMOS for optimum speed and power

■ Offered in Pb-free 48-ball VFBGA and 44-pin TSOP II

packages

Functional Description

The CY62126EV30 is a high performance CMOS static RAM

organized as 64K words by 16 bits

[1]

. This device features

advanced circuit design to provide ultra low active current. This

is ideal for providing More Battery Life™ (MoBL

) in portable

applications such as cellular telephones. The device also has an

automatic power down feature that significantly reduces power

consumption when addresses are not toggling. Placing the

device in standby mode reduces power consumption by more

than 99 percent when deselected (CE

HIGH). The input and

output pins (IO

through IO

) are placed in a high impedance

state when:

■ Deselected (CE HIGH)

■ Outputs are disabled (OE HIGH)

■ Both Byte High Enable and Byte Low Enable are disabled

(BHE

, BLE HIGH)

■ Write operation is active (CE LOW and WE LOW)

To write to the device, take Chip Enable (CE) and Write Enable

(WE

) inputs LOW. If Byte Low Enable (BLE) is LOW, then data

from IO pins (IO

through IO

) is written into the location

specified on the address pins (A

through A

). If Byte High

Enable (BHE

) is LOW, then data from IO pins (IO

through IO

)

is written into the location specified on the address pins (A

through A

To read from the device, take Chip Enable (CE

) and Output

Enable (OE

) LOW while forcing the Write Enable (WE) HIGH. If

Byte Low Enable (BLE

) is LOW, then data from the memory

location specified by the address pins appear on IO

to IO

. If

Byte High Enable (BHE

) is LOW, then data from memory

appears on IO

to IO

. See the “Truth Table” on page 9 for a

complete description of read and write modes.

Note

1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

Logic Block Diagram

[+] Feedback

1 2 3 4 5 6 ... 12 13

Inhaltsverzeichnis

Seite 1 - 1-Mbit (64K x 16) Static RAM

MoBL®,CY62126EV301-Mbit (64K x 16) Static RAMCypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600Document

Seite 2

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 10 of 13Package DiagramsFigure 11. 48-Ball VFBGA (6 x 8 x 1 mm) (51-85150)A1A1 CORNER0.750.75Ø0.

Seite 3

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 11 of 13Figure 12. 44-Pin TSOP II (51-85087)Package Diagrams (continued)51-85087-*A[+] Feedback

Seite 4

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 12 of 13Document History PageDocument Title: MoBL® CY62126EV30, 1-Mbit (64K x 16) Static RAMDocum

Seite 5

Document #: 38-05486 Rev. *E Revised January 5, 2009 Page 13 of 13MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Sem

Seite 6

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 2 of 13Pin ConfigurationsFigure 1. 44-Ball VFBGA (Top View) Figure 2. 44-Pin TSOP II (Top View)

Seite 7

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 3 of 13Maximum RatingsExceeding maximum ratings may shorten the battery life of thedevice. These

Seite 8

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 4 of 13Thermal ResistanceTested initially and after any design or process changes that may affect

Seite 9

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 5 of 13Switching Characteristics Over the Operating Range[10, 11]Parameter Description45 ns (Indu

Seite 10 - , CY62126EV30

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 6 of 13Switching WaveformsFigure 5. Read Cycle No. 1(Address transition controlled)[15, 16]Figur

Seite 11

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 7 of 13Figure 7. Write Cycle No. 1 (WE controlled)[14, 18, 19]Figure 8. Write Cycle No. 2 (CE c

Seite 12

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 8 of 13Figure 9. Write Cycle No. 3 (WE controlled, OE LOW [19]Figure 10. Write Cycle No. 4 (BHE

Seite 13

MoBL®, CY62126EV30Document #: 38-05486 Rev. *E Page 9 of 13Truth TableCE WE OE BHE BLE Inputs/Outputs Mode PowerH X X X X High Z Deselect/Power Down

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