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Cypress MoBL CY62157EV30 Bedienungsanleitung

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8-Mbit (512K x 16) Static RAM
CY62157EV30 MoBL
®
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-05445 Rev. *E Revised May 07, 2007
Features
• TSOP I package configurable as 512K x 16 or as 1M x 8
SRAM
• High speed: 45 ns
• Wide voltage range: 2.20V–3.60V
• Pin compatible with CY62157DV30
• Ultra low standby power
— Typical Standby current: 2 µA
— Maximum Standby current: 8 µA (Industrial)
• Ultra low active power
— Typical active current: 1.8 mA @ f = 1 MHz
• Easy memory expansion with CE
1
, CE
2
, and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Available in both Pb-free and non Pb-free 48-ball VFBGA,
Pb-free 44-pin TSOP II and 48-pin TSOP I packages
Functional Description
[1]
The CY62157EV30 is a high performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life™ (MoBL
®
) in
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption when addresses are not toggling.
Place the device into standby mode when deselected (CE
1
HIGH or CE
2
LOW or both BHE and BLE are HIGH). The input
or output pins (IO
0
through IO
15
) are placed in a high
impedance state when:
• Deselected (CE
1
HIGH or CE
2
LOW)
• Outputs are disabled (OE HIGH)
• Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
• Write operation is active (CE
1
LOW, CE
2
HIGH and WE
LOW)
To write to the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE
) is LOW, then data from IO pins (IO
0
through IO
7
) is
written into the location specified on the address pins (A
0
through A
18
). If Byte High Enable (BHE) is LOW, then data
from IO pins (IO
8
through IO
15
) is written into the location
specified on the address pins (A
0
through A
18
).
To read from the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE
) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
appear on IO
0
to IO
7
. If Byte High Enable (BHE) is LOW, then
data from memory appears on IO
8
to IO
15
. See the “Truth
Table” on page 10 for a complete description of read and write
modes.
Logic Block Diagram
512K × 16 / 1M x 8
RAM Array
IO
0
–IO
7
ROW DECODER
A
8
A
7
A
6
A
5
A
2
COLUMN DECODER
A
11
A
12
A
13
A
14
A
15
SENSE AMPS
DATA IN DRIVERS
OE
A
4
A
3
IO
8
–IO
15
WE
BLE
BHE
A
16
A
0
A
1
A
17
A
9
A
18
A
10
Power Down
Circuit
BHE
BLE
CE
2
CE
1
CE
2
CE
1
BYTE
Notes
1. For best practice recommendations, please refer to the Cypress application note AN1064, SRAM System Guidelines.
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Inhaltsverzeichnis

Seite 1 - 8-Mbit (512K x 16) Static RAM

8-Mbit (512K x 16) Static RAMCY62157EV30 MoBL®Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600Document

Seite 2

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 10 of 14 Truth TableCE1CE2WE OE BHE BLE Inputs/Outputs Mode PowerH X X X X X High-Z Deselect/Power

Seite 3

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 11 of 14Package DiagramsFigure 9. 48-Pin VFBGA (6 x 8 x 1 mm), 51-85150A1A1 CORNER0.750.75Ø0.30±0.

Seite 4

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 12 of 14Figure 10. 44-Pin TSOP II, 51-85087Package Diagrams (continued)51-85087-*A[+] Feedback

Seite 5

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 13 of 14© Cypress Semiconductor Corporation, 2004-2007. The information contained herein is subjec

Seite 6

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 14 of 14Document History PageDocument Title: CY62157EV30 MoBL®, 8-Mbit (512K x 16) Static RAMDocum

Seite 7

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 2 of 14Product Portfolio Product RangeVCC Range (V)Speed (ns)Power DissipationOperating ICC, (mA)S

Seite 8

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 3 of 14The following picture shows the 48-ball VFBGA pinout.[3, 4, 5]Pin Configuration (continued

Seite 9

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 4 of 14Maximum RatingsExceeding maximum ratings may shorten the battery life of thedevice. User gu

Seite 10 - CY62157EV30 MoBL

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 5 of 14Thermal Resistance [10]Parameter Description Test Conditions BGA TSOP I TSOP II UnitΘJATher

Seite 11

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 6 of 14Switching Characteristics Over the Operating Range[13, 14] Parameter Description45 ns (Ind’

Seite 12

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 7 of 14Switching WaveformsRead Cycle No. 1 (Address Transition Controlled)[19, 20]Figure 3. Read C

Seite 13

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 8 of 14Write Cycle No. 1 (WE Controlled)[18, 22, 23]Figure 5. Write Cycle No. 1Write Cycle No. 2 (

Seite 14

CY62157EV30 MoBL®Document #: 38-05445 Rev. *E Page 9 of 14Write Cycle No. 3 (WE Controlled, OE LOW)[23]Figure 7. Write Cycle No. 3Write Cycle No. 4 (

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